PART |
Description |
Maker |
B65512-C-T1 B65511 B65511-A100-A48 B65511-A25-A1 B |
Pot cores are supplied in sets
|
EPCOS[EPCOS]
|
B65511-A63-A33 B65511-A-Y30 B65511-A-Y48 B65511-A2 |
Pot cores are supplied in sets 锅内核供应套
|
EPCOS AG
|
B65807-P-Y38 B65807-P B65807-P-R49 B65807-P-R87 B6 |
RM cores are supplied in sets
|
EPCOS[EPCOS]
|
B65820-W1008-D1 B63399-B4 B63399-B5 B65659-F1-X23 |
RM cores are supplied in sets
|
EPCOS AG EPCOS[EPCOS]
|
X9316W X9316WP X9316WP3 X9316WPI X9316WPI3 X9316WP |
E 2 POT?Nonvolatile Digital Potentiometer E 2 POT?/a> Nonvolatile Digital Potentiometer E 2 POT?/a> Nonvolatile Digital Potentiometer E 2 POT Nonvolatile Digital Potentiometer E 2 POT⑩ Nonvolatile Digital Potentiometer BRIDGE RECTIFIER, 1.2A 40VBRIDGE RECTIFIER, 1.2A 40V; Voltage, Vrrm:120V; Voltage, input RMS:40V; Current, output max:2.5A; Phases, No. of:1; Current, Ifs max:80A; Length / Height, external:12mm; Depth, external:5mm; Width, 首页2锅⑩非易失数字电位器 E2POT nonvolatile digital potentiometer
|
XICOR[Xicor Inc.] NXP Semiconductors N.V.
|
K6T4008U1C-VF10 K6T4008V1C K6T4008U1C-MF10 K6T4008 |
POT 250K OHM 3/8 SQ CERM SL ST POT 25K OHM 3/8 SQ CERM SL ST 512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Nihon Dempa Kogyo Co., Ltd. Samsung Semiconductor Co., Ltd.
|
B65524C1004T001 B65524C1008T001 B65517D0000R030 B6 |
PM/P/P Cores Halves/EP/TT/PR Cores
|
EPCOS
|
B65702A50000000 B63399-B1 B63399-B5 B65679-E1-X22 |
PM/P/P Cores Halves/EP/TT/PR Cores
|
EPCOS[EPCOS]
|
52-PV3F2B0SSG244 |
HARDWARE SUPPLIED: O-RING AND HEXNUT
|
E-SWITCH
|
52-PV4F23011345 |
HARDWARE SUPPLIED: O-RING AND HEXNUT
|
E-SWITCH
|